Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2Bilayer

A comprehensive investigation of long-termenvironmental stability and performance of flexible hybridresistive random access memory (RRAM) devices withPVK:MoS2/TiO(2)bilayer is presented. These devices weresystematically characterized for their switching behavior for a very long duration of 20 months, and it was found that devices were able to maintain their switching behavior with maximum average V-SET of similar to 1.5 V and lowest average V-RESET of similar to-1.8 V, indicating high shelf life and low-voltage operation. Excellent retention of 104s was exhibited by devices even after being in ambient environment for 20 months. Although the devices exhibited almost unchanged V-SET and V(RESET )values upon variation of humidity exposure (RH similar to 42% to similar to 99%), an increase in the magnitude of both was observed upon temperature variation from room temperature (RT) to 100(degrees)C. A typical decay in I-ON/I(OFF )by more than an order of magnitude (from similar to 10(3)) was observed upon aging and application of temperature; however, an increase in the same was observed upon exposure to high humidity on the order of 10(2)-10(3).Our investigation indicates that (PVK:MoS2/TiO2) hybrid switching layer can be suitable for environmentally stable non volatile memory devices for flexible electronics