High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS2 radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS2 RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) increased with reducing gate lengths. From transistors with a gate length of 0.3 mu m, we demonstrated an extrinsic f(T) of 4 GHz and f(max) of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS2 RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS2 for future flexible high-frequency electronics.