Morphological evolution of heteroepitaxial islands during Stranski-Krastonov growth

被引:2
|
作者
Liu, P.
Zhang, Y. W. [1 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore
[2] Inst High Performance Comp, Singapore 117528, Singapore
关键词
epitaxial islands; surface diffusion; finite elements; self-assembly;
D O I
10.1016/j.ijsolstr.2006.09.013
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
Three-dimensional finite element method is used to simulate the formation, self-assembly and shape transition of heteroepitaxial islands during Stranski-Krastonov growth. In the formulation, strain energy, surface energy, surface anisotropy and elastic anisotropy of a cubic lattice structure are taken into account. In the simulations, the SiGe/Si material system is used as a model system. An empirical surface energy as a function of surface orientation is proposed. The minimum energy surfaces are identified based on existing experimental observations. The simulation results show that the coupling of elastic energy relaxation, surface energy anisotropy and elastic anisotropy strongly influences the surface roughening morphology, self-assembly and shape transition of epitaxial islands, resulting in diverse evolution pathways. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1733 / 1744
页数:12
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