Modified Stranski-Krastanov growth in stacked layers of self-assembled islands

被引：164
|
作者：
Schmidt, OG
Kienzle, O
Hao, Y
Eberl, K
Ernst, F
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期
关键词：
D O I：
10.1063/1.123522
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In a stack of vertically aligned Stranski-Krastanov grown islands, the critical thickness for planar growth for all but the initial dot layer is reduced, if the thickness of the spacer layer t(s) is smaller than a certain value t(0). We present structural and photoluminescence results on the basis of the extensively studied lattice-mismatched material system Si/Ge. (C) 1999 American Institute of Physics. [S0003-6951(99)04409-5].
引用
收藏
页码：1272 / 1274
页数：3
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