共 25 条
- [1] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871
- [2] Dependence of minority-carrier recombination lifetime on surface microroughness in silicon wafers Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (12 B):
- [4] DOPING DEPENDENCE OF MINORITY-CARRIER LIFETIME IN GA-DOPED SILICON CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 435 - 440
- [5] INFLUENCE OF HIGH-TEMPERATURE HEATING ON THE MINORITY-CARRIER LIFETIME IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 92 - 93
- [6] DETERMINATION OF MINORITY-CARRIER MOBILITY IN SILICON FROM STATIONARY AND TRANSIENT LIFETIME MEASUREMENTS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02): : 583 - 587
- [7] DEPENDENCE OF MINORITY-CARRIER RECOMBINATION LIFETIME ON SURFACE MICROROUGHNESS IN SILICON-WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12B): : L1792 - L1794