Electrical properties of sputtered ZnO films with nitrogen and phosphorous co-doping

被引：3
|
作者：
Vaithianathan, Veeramuthu [1 ]
Park, Jae Young [1 ]
Kim, Sang Sub [1 ]
机构：
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
来源：
METALS AND MATERIALS INTERNATIONAL | 2008年 / 14卷 / 04期
关键词：
sputtered films; zinc oxide; doping; p-type; sputtering;
D O I：
10.3365/met.mat.2008.08.471
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Acceptor (N)-acceptor (P) co-doped ZnO films were deposited at N2O pressures varied between 5 mTorr and 50 mTorr on Si (001) substrates using radio frequency sputtering. N2O plasma in a growth chamber and a sputtering target containing Zn3P2 were used as the sources for N and P, respectively. Electrical measurements revealed that all the films had an n-type conduction in the as-grown state for all N2O pressures. However, for the films grown at an N2O pressure of 10 mTorr, annealing at 800 degrees C resulted in flipping conduction behavior from n- to p-type. Low temperature photoluminescence results confirmed the presence of an acceptor-related emission at 3.303 eV for the p-type ZnO films only.
引用
收藏
页码：471 / 475
页数：5
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