Improvement in optical and electrical properties of ZnO films by neodymium and aluminum co-doping

被引：0
|
作者：
L.-L. Wang
Z.-Q. Ren
Q. Li
机构：
[1] Shaanxi University of Science and Technology,Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education
来源：
Journal of Materials Science: Materials in Electronics | 2014年 / 25卷
关键词：
Nanoscale Particle Size; Burstein Effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Neodymium and aluminum co-doping effect on optical and electrical properties of ZnO films with Al/Zn ratio of 0.01 were studied. The films were deposited by chemical solution deposition and characterized by X-ray diffraction, scanning electron microscopy, UV–Vis and luminescent spectrophotometry, and electrical measurement. The films showed nanoscale particle size increasing as increased Nd/Al ratio, and obvious variations in transmittance of the UV–Visible light range, band gap, and resistivity with changing of Nd/Al ratio. The optimal optical and electrical properties were achieved when Nd/Al ratio was 0.0039. The photoluminescence measurement indicated that the films showed strong near band gap emission and weak emissions related to intrinsic defect.
引用
收藏
页码：2992 / 2997
页数：5
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