ZnO Doping and Co-doping Paradigm and Properties

被引：3

作者：

Shtereva, K. ^{[1
,2
]}

Novotny, I. ^{[2
]}

Tvarozek, V. ^{[2
]}

Sutta, P. ^{[3
]}

Vincze, A. ^{[2
,4
]}

Pullmannova, A. ^{[2
]}

机构：

[1] Univ Rousse, Dept Elect, BG-7017 Rousse, Bulgaria

[2] Slovak Tech Univ Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[3] Univ W Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic

[4] Ctr Int Laser, Bratislava 84104, Slovakia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 09期

关键词：

OXIDE THIN-FILMS; ZINC-OXIDE; OPTICAL-PROPERTIES; DOPED ZNO; TEMPERATURE; DC;

D O I：

10.1149/1.3459900

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Here, we report on experimental studies of the role of doping and co-doping on the properties of ZnO thin films deposited by radio-frequency diode sputtering at varying nitrogen content (0 divided by 100%) in the sputtering Ar/N(2) gas. Co-doping improved the crystalline structure, and ZnO: Al:N films maintain a c-axis texture in the direction of the surface normal. Depending on the N(2) content, the estimated crystallite size varies from 8 to 37 nm for ZnO: N and 21-33 nm for ZnO: Al: N. Nitrogen doping results in an increased absorption around the bandedge and the bandgap narrowing (E(g) < 3.2 eV). (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3459900] All rights reserved.

引用

页码：II891 / II895

页数：5

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