A Robust One-Shot Switch for High-Power Pulse Applications

被引：31

作者：

Baginski, Thomas A. ^{[1
]}

Thomas, Keith A. ^{[2
]}

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[2] USAF Eglin AFB, Ft Walton Beach, FL 32542 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 1-2期

关键词：

High speed; high-voltage switch; low parasitic impedance; low turn-on voltage; MODEL; OPTIMIZATION; DEVICE; IGBTS;

D O I：

10.1109/TPEL.2008.2005411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage switches capable of operating at high speeds and over a wide range of voltages and energies are used in a wide variety of applications in material science and plasma physics. This paper discusses the fabrication and characterization of a novel high-voltage shock switch. The structure has been designed to operate as a fast-turn-on, low-impedance device. The switch is a planar structure that allows for direct integration into the stripline geometries used in a conventional capacitive discharge unit.

引用

页码：253 / 259

页数：7

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