A Robust One-Shot Switch for High-Power Pulse Applications

被引：31
|
作者：
Baginski, Thomas A. [1 ]
Thomas, Keith A. [2 ]
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] USAF Eglin AFB, Ft Walton Beach, FL 32542 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 1-2期
关键词：
High speed; high-voltage switch; low parasitic impedance; low turn-on voltage; MODEL; OPTIMIZATION; DEVICE; IGBTS;
D O I：
10.1109/TPEL.2008.2005411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage switches capable of operating at high speeds and over a wide range of voltages and energies are used in a wide variety of applications in material science and plasma physics. This paper discusses the fabrication and characterization of a novel high-voltage shock switch. The structure has been designed to operate as a fast-turn-on, low-impedance device. The switch is a planar structure that allows for direct integration into the stripline geometries used in a conventional capacitive discharge unit.
引用
收藏
页码：253 / 259
页数：7
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