NiTi/Pb(Zr0.52Ti0.48)O3 thin film heterostructures for vibration damping in MEMS

被引:7
|
作者
Choudhary, Nitin [1 ,2 ]
Kharat, D. K. [3 ]
Van Humbeeck, J. [3 ]
Kaur, Davinder [1 ,2 ]
机构
[1] Indian Inst Technol, Funct Nanomat Res Lab, Dept Phys, Roorkee 247667, Uttarakhand, India
[2] Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttarakhand, India
[3] Katholieke Univ Leuven, Dep MTM, B-3001 Louvain, Belgium
关键词
Magnetron sputtering; Shape memory materials; Piezoelectric materials; Nanoindentation; Vibration damping; INDENTATION CREEP; INTERNAL-FRICTION;
D O I
10.1016/j.sna.2012.12.005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the damping properties of NiTi/Pb(Zr0.52Ti0.48)O-3 (PZT) heterostructures using nanoindentation technique. Creep and impact tests were performed to obtain hardness (H), elastic modulus (E-r), damping factor (tan delta) and figure of merit (FOM. A hold time of 30 s during creep test shows significant improvement in damping factor for NiTi/PZT (0.046) and CrTiN/NiTi/PZT (0.050). Impact test demonstrates highest damping capacity with lowest coefficient of restitution (0.30) in CrTiN/NiTi/PZT. Higher hardness (19.8 GPa) and excellent figure of merit (0.751) in CrTiN/NiTi/PZT makes them very attractive damping material for microelectromechanical systems (MEMS). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:30 / 34
页数:5
相关论文
共 50 条
  • [21] Double doping effect on ferroelectric and leakage current behavior of Pb (Zr0.52Ti0.48)O3 thin film
    Jeyaseelan, Antony A.
    Rangappa, Dinesh
    Dutta, Soma
    CERAMICS INTERNATIONAL, 2019, 45 (18) : 25027 - 25033
  • [22] Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators
    Chandrahalim, Hengky
    Bhave, Sunil A.
    Polcawich, Ronald
    Pulskamp, Jeff
    Judy, Daniel
    Kaul, Roger
    Dubey, Madan
    APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [23] Surface chemical bonding states and ferroelectricity of Pb(Zr0.52Ti0.48)O3 thin films
    Cho, CR
    CRYSTAL RESEARCH AND TECHNOLOGY, 2000, 35 (01) : 77 - 86
  • [24] Effect of stresses on the dielectric and piezoelectric properties of Pb(Zr0.52Ti0.48)O3 thin films
    Coleman, K.
    Walker, J.
    Beechem, T.
    Trolier-McKinstry, S.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (03)
  • [25] Dependence of lattice constant on layer thickness of Pb(Zr0.52Ti0.48)O3 thin films
    Li, CR
    Cui, SF
    Liu, BT
    Zhu, AJ
    Jiang, XM
    Zhao, BR
    Mai, ZH
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (15) : 1263 - 1266
  • [26] In situ laser annealing during growth of Pb(Zr0.52Ti0.48)O3 thin films
    Rajashekhar, Adarsh
    Fox, Austin
    Bharadwaja, S. S. N.
    Trolier-McKinstry, Susan
    APPLIED PHYSICS LETTERS, 2013, 103 (03)
  • [27] Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films
    Pertsev, NA
    Contreras, JR
    Kukhar, VG
    Hermanns, B
    Kohlstedt, H
    Waser, R
    APPLIED PHYSICS LETTERS, 2003, 83 (16) : 3356 - 3358
  • [28] Pb(Zr0.52Ti0.48)O3 nanotubes synthesis and infrared absorption properties
    Li, Zeping
    Xu, Zhimou
    Ma, Zhichao
    Yu, Zhiqiang
    Qu, Xiaopeng
    Wang, Shuangbao
    Peng, Jing
    OPTICAL MATERIALS, 2016, 51 : 171 - 174
  • [29] Electrical properties of unconstrained ferroelectric Pb(Zr0.52Ti0.48)O3 microtubes
    Bharadwaja, S. S. N.
    Li, X.
    Moses, P.
    Mayer, T. S.
    McKinstry, S. Trolier
    2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, 2008, : 409 - 409
  • [30] Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy
    Sharma, AK
    Narayan, J
    Jin, C
    Kvit, A
    Chattopadhyay, S
    Lee, C
    APPLIED PHYSICS LETTERS, 2000, 76 (11) : 1458 - 1460