Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

被引:111
|
作者
Pertsev, NA
Contreras, JR
Kukhar, VG
Hermanns, B
Kohlstedt, H
Waser, R
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1063/1.1621731
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field E-c increases drastically as the film becomes thinner, reaching values as high as E(c)approximate to1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field E-th of a ferroelectric film as a function of the misfit strain S-m in an epitaxial system and showed that E-th strongly depends on S-m. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field E-c, we conclude that measurements give an apparent E-c rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. (C) 2003 American Institute of Physics.
引用
收藏
页码:3356 / 3358
页数:3
相关论文
共 50 条
  • [1] Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
    Liu, Q.
    Marconot, O.
    Piquemal, M.
    Eypert, C.
    Borowiak, A. S.
    Baboux, N.
    Gautier, B.
    Benamrouche, A.
    Rojo-Romeo, P.
    Robach, Y.
    Penuelas, J.
    Vilquin, B.
    THIN SOLID FILMS, 2014, 553 : 85 - 88
  • [2] Growth model of epitaxial Pb(Zr0.52Ti0.48)O3 nanoislands
    Chu, MW
    Szafraniak, I
    Scholz, R
    Hesse, D
    Alexe, M
    Gösele, U
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 9 - 12
  • [3] Preparation and study on epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric films on different substrates
    Li, JK
    Yao, X
    ACTA PHYSICA SINICA, 2005, 54 (06) : 2938 - 2944
  • [4] Effect of LaNiO3 interlayer on electrical properties of Pb(Zr0.52Ti0.48)O3/LaNiO3/Pb(Zr0.52Ti0.48)O3 composite films
    Zhang, Fan
    Lv, Yang
    Shao, Yan
    Bai, Yu
    Li, Yi Zhuo
    Wang, Chao
    Wang, Zhan Jie
    VACUUM, 2021, 189
  • [5] Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film
    Han, Guifang
    Ryu, Jungho
    Yoon, Woon-Ha
    Choi, Jong-Jin
    Hahn, Byung-Dong
    Kim, Jong-Woo
    Park, Dong-Soo
    Ahn, Cheol-Woo
    Priya, Shashank
    Jeong, Dae-Yong
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
  • [6] REVERSIBLE PYROELECTRIC AND PHOTOGALVANIC CURRENT IN EPITAXIAL PB(ZR0.52TI0.48)O3 THIN-FILMS
    LEE, J
    ESAYAN, S
    PROHASKA, J
    SAFARI, A
    APPLIED PHYSICS LETTERS, 1994, 64 (03) : 294 - 296
  • [7] Dynamic hysteresis of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
    Liu, JM
    Yu, LC
    Yuan, GL
    Yang, Y
    Chan, HLW
    Liu, ZG
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 798 - 805
  • [8] Fatigue and refresh characteristics of Pb(Zr0.52Ti0.48)O3 thin films
    Chae, BG
    Lee, SJ
    Yang, YS
    Kim, SH
    Jang, MS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 31 (06) : 874 - 878
  • [9] Low symmetry phase in Pb(Zr0.52Ti0.48)O3 epitaxial thin films with enhanced ferroelectric properties
    Yan, Li
    Li, Jiefang
    Cao, Hu
    Viehland, D.
    APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [10] Highly textured laser annealed Pb(Zr0.52Ti0.48)O3 thin films
    Bharadwaja, S. S. N.
    Griggio, F.
    Kulik, J.
    Trolier-McKinstry, S.
    APPLIED PHYSICS LETTERS, 2011, 99 (04)