Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes

被引：2

作者：

Zhao, Xiangfu ^{[1
]}

Han, Ping ^{[1
]}

Scott, Shelley ^{[2
]}

Legally, Max ^{[2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Natl Lab Solid State Microstruct, Nanjing 210008, Jiangsu, Peoples R China

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI USA

来源：

MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8 | 2012年 / 383-390卷

关键词：

Silicon Nanomembrane; Electrical Conductivity; Hydrofluoric Acid; Forming Gas; TRANSPORT;

D O I：

10.4028/www.scientific.net/AMR.383-390.7220

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

引用

页码：7220 / +

页数：2

共 50 条

[41] Texture evolution of the surface layer of high silicon gradient electrical steel and influence on the magnetic properties
Wu, Jun
Zhang, Li
Gong, Tian
Zhu, Jun
Hao, Qinliang
Qin, Zhuo
Cong, Shanhai
Zhan, Dongfang
Xiang, Zhidong
VACUUM, 2015, 119 : 189 - 195
[42] MICROSTRUCTURE, ELECTRICAL-PROPERTIES AND PASSIVATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDE INTERFACE
CORREIA, A
BALLUTAUD, D
MAURICE, JL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (03) : 898 - 902
[43] Preparation of porous silicon and the influence of gettering on the electrical properties
Li, Jia-Yan
Guo, Su-Xia
Tan, Yi
Liu, Chen-Guang
Cailiao Gongcheng/Journal of Materials Engineering, 2012, (03): : 70 - 73
[44] RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
HUGHES, HL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 195 - &
[45] DETERMINATION OF ELECTRICAL PROPERTIES OF A STATISTICALLY CORRUGATED SURFACE OF FINITE CONDUCTIVITY
POZDNYAK, SI
ANIKEYEN.GN
TELECOMMUNICATIONS AND RADIO ENGINEER-USSR, 1969, (04): : 85 - &
[46] Influence of point defects on the electrical conductivity and dielectric properties of langasite
Domoroshchina, EN
Dubovskii, AB
Kuz'micheva, GM
Semenkovich, GV
INORGANIC MATERIALS, 2005, 41 (11) : 1218 - 1221
[47] Influence of Point Defects on the Electrical Conductivity and Dielectric Properties of Langasite
E. N. Domoroshchina
A. B. Dubovskii
G. M. Kuz'micheva
G. V. Semenkovich
Inorganic Materials, 2005, 41 : 1218 - 1221
[48] Influence of the electrical conductivity on magnetic properties of CdZnMnTe epitaxial layers
Wojciechowski, T.
Jakubas, P.
Kolkovsky, V.
Swiatek, K.
Knoff, W.
Story, T.
Boguslawski, P.
Karczewski, G.
PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 533 - 534
[49] Influence of the oxidation on the surface properties of silicon carbide
Guerfi, K
Lagerge, S
Meziani, MJ
Nedellec, Y
Chauveteau, G
THERMOCHIMICA ACTA, 2005, 434 (1-2) : 140 - 149
[50] Influence of Surface/Interface Stress on Thermal Conductivity of Stressed GaN Nanofilms
Zhu, Linli
Luo, Haonan
2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2015, : 290 - 292

← 1 2 3 4 5 →