Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes

被引：2

作者：

Zhao, Xiangfu ^{[1
]}

Han, Ping ^{[1
]}

Scott, Shelley ^{[2
]}

Legally, Max ^{[2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Natl Lab Solid State Microstruct, Nanjing 210008, Jiangsu, Peoples R China

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI USA

来源：

MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8 | 2012年 / 383-390卷

关键词：

Silicon Nanomembrane; Electrical Conductivity; Hydrofluoric Acid; Forming Gas; TRANSPORT;

D O I：

10.4028/www.scientific.net/AMR.383-390.7220

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

引用

页码：7220 / +

页数：2

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