Application of Lock-in Thermography for backside failure localization using solid immersion lenses

被引：0

作者：

Schmidt, Christian ^{[1
]}

Grosse, Christian ^{[1
]}

Altmann, Frank ^{[1
]}

Schulz, Juergen

Seibt, Alexander

机构：

[1] Fraunhofer Inst Mech Mat, Halle, Germany

来源：

ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2010年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the application of solid immersion lenses (SIL) in combination with Lock-in Thermography will be demonstrated for backside defect localization. The paper will give an introduction into Lock-in Thermography technique and presents a new developed easy-to-use holding system to adapt SIL for high resolution thermal imaging. It will be shown that defect localization can be applied from the backside of the chip up to a silicon thickness of 250 mu m using the same SIL. The relationship between the bulk silicon thickness and the resulting optical parameters was investigated.

引用

页码：378 / 383

页数：6

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