Application of Lock-in Thermography for backside failure localization using solid immersion lenses

被引：0
|
作者：
Schmidt, Christian [1 ]
Grosse, Christian [1 ]
Altmann, Frank [1 ]
Schulz, Juergen
Seibt, Alexander
机构：
[1] Fraunhofer Inst Mech Mat, Halle, Germany
来源：
ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2010年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper the application of solid immersion lenses (SIL) in combination with Lock-in Thermography will be demonstrated for backside defect localization. The paper will give an introduction into Lock-in Thermography technique and presents a new developed easy-to-use holding system to adapt SIL for high resolution thermal imaging. It will be shown that defect localization can be applied from the backside of the chip up to a silicon thickness of 250 mu m using the same SIL. The relationship between the bulk silicon thickness and the resulting optical parameters was investigated.
引用
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页码：378 / 383
页数：6
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