Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography

被引：0
|
作者：
Schmidt, Christian [1 ]
Wadhwa, Kannu [2 ]
Reverdy, Antoine [3 ]
Reinders, Ewald [4 ]
机构：
[1] DCG Syst GmbH, Syst & Applicat Dev Microelect, Erlangen, Germany
[2] DCG Syst, Fremont, CA USA
[3] Sector Technol SAS, Gieres, France
[4] MASER Engn BV, Enschede, Netherlands
来源：
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年
关键词：
Lock-in Thermography; non-destructive; hot spot localization; failure analysis; whisker detection; device charaterization;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.
引用
收藏
页数：6
相关论文
共 14 条
  • [1] Application of Lock-in Thermography for backside failure localization using solid immersion lenses
    Schmidt, Christian
    Grosse, Christian
    Altmann, Frank
    Schulz, Juergen
    Seibt, Alexander
    ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2010, : 378 - 383
  • [2] Application of Lock-in Thermography on PCB for Fault Localization and Validation of Failure Mechanism Due to External Discrete Component Variation
    Ng, William
    Weaver, Kevin
    Gemmill, Zachary
    Deslandes, Herve
    Schlangen, Rudolf
    ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2010, : 191 - 195
  • [3] Lock-in thermography for defect localization and thermal characterization for space application
    Mousnier, M.
    Sanchez, K.
    Locatelli, E.
    Lebey, T.
    Bley, V.
    MICROELECTRONICS RELIABILITY, 2018, 88-90 : 67 - 74
  • [4] Mobile ions entering the IGBT gate oxide- electrical detection and failure localization by lock-in thermography
    Kaesbauer, M.
    Dreher, P.
    Sippel, M.
    Schmidt, R.
    MICROELECTRONICS RELIABILITY, 2023, 150
  • [5] Application Angle of Defects Detection in the Pipe Using Lock-in Infrared Thermography
    Yun, Kyung-Won
    Go, Gyeong-Uk
    Kim, Jin-Weon
    Jung, Hyun-Chul
    Kim, Kyung-Suk
    JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING, 2013, 33 (04) : 323 - 329
  • [6] The factors study of backside hotspot localization with application Infrared Lock-in Thermography
    Hoe, T. M.
    Ng, K. K.
    PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015), 2015, : 230 - 235
  • [7] Dynamic lock-in thermography for operation mode-dependent thermally active fault localization
    Schlangen, R.
    Deslandes, H.
    Lundquist, T.
    Schmidt, C.
    Altmann, F.
    Yu, K.
    Andreasyan, A.
    Li, S.
    MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) : 1454 - 1458
  • [8] Method for quantitative 3D evaluation of defects in CFRP using active lock-in thermography
    Ekanayake, Sarah
    Isenberg, Christopher
    Schmitt, Robert H.
    1ST CIRP CONFERENCE ON COMPOSITE MATERIALS PARTS MANUFACTURING (CIRP CCMPM 2017), 2017, 66 : 254 - 258
  • [9] Application of lock-in thermography for failure analysis in integrated circuits using quantitative phase shift analysis
    Schmidt, Ch
    Altmann, F.
    Breitenstein, O.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (15): : 1261 - 1267
  • [10] Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography
    Huth, S
    Breitenstein, O
    Huber, A
    Lambert, U
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) : 4000 - 4003
12