Magnetic Field Dependence of Negative Differential Conductivity in Double Barrier Resonant Tunneling Diodes

被引：0
|
作者：
Zhou, D. M. [1 ,2 ,3 ,4 ]
Xiong, D. Y. [5 ]
机构：
[1] Univ Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Univ Duisburg Essen, Fac Phys, Lotharstr 1, D-47057 Duisburg, Germany
[4] Univ Duisburg Essen, CENIDE, Lotharstr 1, D-47057 Duisburg, Germany
[5] East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 08期
关键词：
Negative Differential Conductivity; Quantum Dot Resonant Tunneling Diodes; Magneto Tunneling; INTRINSIC BISTABILITY;
D O I：
10.1166/jnn.2016.12794
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report experimental results of the magnetic field dependence of current-voltage (I-V) characteristics in AlAs/GaAs/AlAs resonant tunneling diodes. A better understanding of tunneling transport is established in the system. A transverse magnetic field applied in the plane of the tunneling barriers significantly changes the I-V characteristics and eliminates the peak to valley ratio. The behavior can be attributed to the electron momentum shift caused by the magnetic field during the traveling path from the emitter three-dimensional reservoir into quantum well. The magneto-oscillations in the tunneling current for magnetic paralleling with current are discussed in terms of a simple model of resonant tunneling.
引用
收藏
页码：8055 / 8060
页数：6
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