Rapid and Efficient Method for Numerical Quantum Mechanical Simulation of Gate-All-Around Nanowire Transistors

被引：0

作者：

Selim, Dalia ^{[1
]}

Gamal, Salah ^{[1
]}

Fikry, Wael ^{[1
]}

Abd-El Halim, Omar ^{[1
]}

机构：

[1] Ain Shams Univ, Fac Engn, Dept Engn Phys & Math, Cairo, Egypt

来源：

2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL) | 2012年

关键词：

TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green's function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is used in conjunction with optimizing the flatband voltage (V-FB) as a fitting parameter. Verification of the results is done through a comparison with those obtained from a published 3D simulator and excellent agreement is achieved.

引用

页码：229 / 232

页数：4

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