Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

被引：4

作者：

Bessolov, V. N. ^{[1
,2
]}

Grashchenko, A. S. ^{[1
]}

Konenkova, E. V. ^{[1
,2
]}

Myasoedov, A. V. ^{[2
]}

Osipov, A. V. ^{[1
,3
]}

Red'kov, A. V. ^{[1
]}

Rodin, S. N. ^{[2
]}

Rubets, V. P. ^{[4
]}

Kukushkin, S. A. ^{[1
,3
]}

机构：

[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

[4] Tech Univ, St Petersburg State Inst Technol, St Petersburg 190013, Russia

来源：

PHYSICS OF THE SOLID STATE | 2015年 / 57卷 / 10期

基金：

俄罗斯科学基金会;

关键词：

GALLIUM NITRIDE; SILICON; DIODES;

D O I：

10.1134/S1063783415100042

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

引用

页码：1966 / 1971

页数：6

共 50 条

[21] Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates
Venugopal, R
Liaw, HM
Wan, J
Melloch, MR
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 461 - 466
[22] Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates
Liaw, HM
Venugopal, R
Wan, J
Melloch, MR
SOLID-STATE ELECTRONICS, 2001, 45 (03) : 417 - 421
[23] Growth and properties of freestanding GaN substrates by HVPE using an AlN buffer layer deposited on Si
Kim, ST
Chung, SH
Moon, DC
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 (06) : 736 - 740
[24] High quality GaN layers on Si(111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer
Hageman, PR
Haffouz, S
Kirilyuk, V
Grzegorczyk, A
Larsen, PK
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 523 - 526
[25] EFFECT OF ALAS BUFFER LAYERS ON EPITAXIAL-GROWTH OF GAAS ON SI(100)
KOBAYASHI, H
KAWABE, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1342 - L1345
[26] Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth
Ito, Y
Yamauchi, T
Yamamoto, A
Sasase, M
Nishio, S
Yasuda, K
Ishigami, Y
APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 159 - 164
[27] Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
Ueno, Kohei
Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
Amanai, Hidetaka
Nagao, Satoru
Horie, Hideyoshi
APPLIED PHYSICS LETTERS, 2007, 91 (08)
[28] Semipolar GaN(10-11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template
Bessolov, Vasily
Zubkova, Anna
Konenkova, Elena
Konenkov, Steven
Kukushkin, Sergey
Orlova, Tatiana
Rodin, Sergey
Rubets, Vladimir
Kibalov, Dmitry
Smirnov, Valery
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (02):
[29] Effect of an Al pre-seeded AlN buffer on GaN films grown on Si(111) substrates by using SiC intermediate layers
Kwon, MK
Jeong, YH
Shin, EH
Yang, JW
Lim, KY
Roh, JI
Nahm, KS
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 880 - 883
[30] GaN layers grown by HVPE on p-type 6H-SiC substrates
Nikolaev, AE
Melnik, YV
Blashenkov, MN
Kuznetsov, NI
Nikitina, IP
Zubrilov, AS
Tsvetkov, DV
Nikolaev, VI
Dmitriev, VA
Soloviev, VA
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U346 - U352

← 1 2 3 4 5 →