Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation

The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 key, current density of 8 mu A/cm(2) for various doses from 6.0 center dot 10(15) to 7.5 center dot 10(16) ion/cm(2) and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0 center dot 10(15) ion/cm(2) leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5 center dot 10(16) ion/cm(2) after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles.