CVD diamond films: from growth to applications

被引：169
|
作者：
Gicquel, Alix [1 ]
Hassouni, Khaled [1 ]
Silva, Francois [1 ]
Achard, Jocelyn [1 ]
机构：
[1] Univ Paris 13, CNRS, Lab Ingn Mat & Hautes Press, UPR 1311, F-93430 Villetaneuse, France
来源：
CURRENT APPLIED PHYSICS | 2001年 / 1卷 / 06期
关键词：
CVD diamond; Applications; Growth mechanisms; Plasma modeling; Plasma diagnostics;
D O I：
10.1016/S1567-1739(01)00061-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present review provides an up-to-date report on the main potential of CVD diamond films for industrial applications as well as on recent basic research which seeks to understand diamond deposition microwave plasma reactors. This review includes firstly an overview of diamond film applications. Elements which explain variations in diamond film characteristics as a function of synthesis conditions are given. Also experimental results are reported which show variations in diamond characteristics (quality, microstructure, growth rate, growth mechanisms) as four plasma variables (pressure, power, percentage of methane, substrate temperature) are systematically changed. In the second part, we discuss the effects of these variables on local parameters such as electron temperature, gas temperature, carbon-containing species and H-atom densities. Finally, based on these results, relationships between key local parameters and diamond characteristics are established and discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：479 / 496
页数：18
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