Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers

被引：0
|
作者：
Mahapatra, R [1 ]
Maikap, S [1 ]
Dhar, A [1 ]
Mathur, BK [1 ]
Ray, SK [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
来源：
FERROELECTRICS | 2005年 / 329卷
关键词：
high-k; gate dielectric; ZrO2; SiGeC; silicate;
D O I：
10.1080/00150190500315715
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The characteristics of ZrO2 gate dielectric along with the interfacial layer on O-2- and N2O-plasma treated partially strain-compensated Si0.69Ge0.3C0.01/Si heterostructure have been investigated using spectroscopic and electrical measurements. Time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy analyses show the formation of an oxygen or nitrogen rich Zr-germano-silicate interfacial layer between the deposited ZrO 2 and SiGeC films. The electrical properties under a constant current stressing have been studied using a metal-oxide-semiconductor structure. The N2O-plasma treated SiGeC film has a higher effective dielectric constant (k greater than or similar to 14) than that of the O-2-plasma treated (k greater than or similar to 12) films.
引用
收藏
页码：1005 / 1009
页数：5
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