STUDY OF THE COMPOSITION OF THIN DIELECTRICS GROWN ON SI IN A PURE N2O AMBIENT

被引：39
|
作者：
CHU, TY
TING, W
AHN, JH
LIN, S
KWONG, DL
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期
关键词：
D O I：
10.1063/1.105323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The composition of ultrathin oxides grown on both [100] and [111]Si substrates in pure N2O in a conventional furnace has been studied using Auger electron spectroscopy (AES) analysis, chemical etching, and electrical measurements. Results show a peak nitrogen concentration at the Si-SiO2 interface which decreases from the Si-SiO2 interface to the oxide surface. This nitrogen distribution is responsible for superior electrical properties of metal-oxide-semiconductor (MOS) devices with these films as gate dielectrics.
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页码：1412 / 1414
页数：3
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