Effect of irradiation on Gallium Arsenide solar cells with multi quantum well structures

被引：0

作者：

Maximenko, S. I. ^{[1
]}

Lumb, M. P. ^{[2
]}

Hoheisel, R. ^{[2
]}

Gonzalez, M. ^{[3
]}

Scheiman, D. A. ^{[1
]}

Messenger, S. R. ^{[4
]}

Tibbits, T. N. D. ^{[5
]}

Imaizumi, M. ^{[6
]}

Ohshima, T. ^{[7
]}

Sato, S. -I. ^{[7
]}

Jenkins, P. P. ^{[1
]}

Walters, R. J. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20052 USA

[3] Sotera Def Solut, Annapolis Jct, MD 20701 USA

[4] Univ Maryland Baltimore Cty, Baltimore, MD 21250 USA

[5] QuantaSol Ltd, Kingston Upon Thames KT1 3GZ, Surrey, England

[6] Japan Aerosp Explorat Agcy JAXA, Tsukuba, Ibaraki 3058505, Japan

[7] Japan Atom Energy Agcy JAEA, Takasaki, Gunma 3701292, Japan

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

Irradiation; SEM; EBIC; Quantum Wells; GaAs; simulation; C-V; BEAM-INDUCED CURRENT; CARRIER REMOVAL; SEMICONDUCTORS; RADIATION; DEFECTS; SPACE; GAAS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n-to p-type was found in MQW i-region at displacement damage dose as low as low as similar to 9.88E9 MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.

引用

页码：2144 / 2148

页数：5

共 50 条

[31] Precision comparison of the quantum Hall effect in graphene and gallium arsenide
Janssen, T. J. B. M.
Williams, J. M.
Fletcher, N. E.
Goebel, R.
Tzalenchuk, A.
Yakimova, R.
Lara-Avila, S.
Kubatkin, S.
Fal'ko, V. I.
METROLOGIA, 2012, 49 (03) : 294 - 306
[32] The magnetoelectric effect in structures based on metallized gallium arsenide substrates
Laletin, V. M.
Stognii, A. I.
Novitskii, N. N.
Poddubnaya, N. N.
TECHNICAL PHYSICS LETTERS, 2014, 40 (11) : 969 - 971
[33] Study on multi-quantum barriers for use in quantum well solar cells
Wu, LZ
Tian, W
Jiang, XT
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 607 - 610
[34] INDIUM TIN OXIDE GALLIUM-ARSENIDE SOLAR-CELLS
NASEEM, S
COUTTS, TJ
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4463 - 4464
[35] Wide band Metamaterial Absorber for Gallium Arsenide GaAs solar cells
John, Victor Du H.
Antony, Blessy
Teja, Neelapala Nava
Gandikota, Vinod
ICSPC'21: 2021 3RD INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND COMMUNICATION (ICPSC), 2021, : 578 - 580
[36] Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction
Ansari, Zeeshan Alam
Singh, Thokchom Jayenta
Islam, Sk Masiul
Singh, Sumitra
Mahala, Pramila
Khan, Afzal
Singh, Khomdram Jolson
OPTIK, 2019, 182 : 500 - 506
[37] THIN-FILM GALLIUM-ARSENIDE SOLAR-CELLS
CHU, SS
CHU, TL
WANG, CP
YANG, HT
MONROE, SE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C317 - C318
[38] Graphene/gallium arsenide-based Schottky junction solar cells
Jie, Wenjing
Zheng, Fengang
Hao, Jianhua
APPLIED PHYSICS LETTERS, 2013, 103 (23)
[39] GALLIUM-ARSENIDE SOLAR-CELLS FOR USE WITH CONCENTRATED SUNLIGHT
BURGESS, JW
DAVIS, R
DEBNEY, BT
NICKLIN, R
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 : S69 - S73
[40] Quantum well solar cells
Barnham, Keith
Ballard, Ian
Barnes, Jenny
Connolly, James
Griffin, Paul
Kluftinger, Benjamin
Nelson, Jenny
Tsui, Ernest
Zachariou, Alexander
Applied Surface Science, 1997, 113-114 : 722 - 733

← 1 2 3 4 5 →