New MOSFET-Based Expander for High Frequency Ultrasound Systems

被引：4

作者：

Choi, Hojong ^{[1
]}

Kim, Mingon ^{[1
]}

Shung, K. Kirk ^{[1
]}

机构：

[1] Univ So Calif, NIH Transducer Resource Ctr, Los Angeles, CA 90089 USA

来源：

2012 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2012年

关键词：

Protection Devices; Expander; Power MOSFET; High Frequency Ultrasound Systems; Ultrasonic Transducers;

D O I：

10.1109/ULTSYM.2012.0155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diode-based expanders (expanders with single-crossed diodes) are widely used for pulse-echo measurements and in imaging systems. The function of the diode-based expander is to obstruct the noise from the transmitted output signals of the pulser and block the returned signals from the ultrasonic transducers to the pulser. It may also degrade the performance of the transducer and electronic components on the imaging side of the system because of non-linearity and attenuation at higher voltages. A new type of expander using power MOSFETs for high frequency ultrasound systems is proposed and studied. Compared to diode-based expander, this device is shown to yield lower insertion loss and total harmonic distortion, and faster reverse recovery time.

引用

页码：623 / 626

页数：4

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