Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

被引：28

作者：

Zhang, Yamin ^{[1
]}

Feng, Shiwei ^{[1
]}

Zhu, Hui ^{[1
]}

Zhang, Jianwei ^{[1
]}

Deng, Bing ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Semicond Device Reliabil Inst, Beijing 100124, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 05期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

ALGAN/GAN ELECTRONIC DEVICES; THERMAL-BOUNDARY RESISTANCE; FIELD-EFFECT TRANSISTORS; RAMAN-SPECTROSCOPY; PIEZOELECTRIC POLARIZATION; MOBILITY TRANSISTORS; HOT-ELECTRON; TEMPERATURE; PERFORMANCE; HFETS;

D O I：

10.1016/j.microrel.2013.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of transient temperature under the pulse on and cycle pulse mode are studied for GaN-based HEMT. The increase of channel transient temperature under pulse operation for different rising time, duty cycle and frequency has been determined using physical-based simulations, respectively. The results show that the peak temperature in pulse mode with the same operating frequency increases with the duty cycle under quasi-steady-state, but the changing rate decreases as the temperature goes up. The maximum of peak temperature change in one cycle is reached at 50% duty cycle. For the pulse with the same duty cycle, the peak temperature decreases as the frequency increases under quasi-steady-state, while the changing rate slows down. The results can be used to improve the lifetime and performance reliability. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：694 / 700

页数：7

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