Fast self-heating in GaN-based laser diodes

We study the time evolution of the internal temperature of GaN-based laser diodes in pulsed operation using time resolved spectroscopy. Time dependent emission spectra are compared to continuous-wave measurements at different temperatures to relate changes in the longitudinal mode spectrum to the internal temperature. From the different shift in emission center and longitudinal modes, two subsystems are identified which heat up on different time scales: the charge carrier plasma and the crystal lattice. While the lattice takes several microseconds to reach thermal equilibrium, the plasma heats up within 20 ns after the onset of the electrical pulse. This behavior is attributed to the small heat capacity of the charge carrier plasma compared to the crystal lattice. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3587810]