In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surface

被引：3

作者：

Takeguchi, M ^{[1
]}

Liu, J ^{[1
]}

Zhang, Q ^{[1
]}

Tanaka, M ^{[1
]}

Yasuda, H ^{[1
]}

Furuya, K ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

transmission electron microscopy; reflection electron microscopy; island growth; silicide;

D O I：

10.1016/S0022-0248(01)01859-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

I'd was deposited onto Si (1 1 1) 7 x 7 surface at about 700 K inside in ultrahigh vacuum transmission electron microscope. In reflection electron microscopy (REM) observation of Pd-deposition process. it was indicated that Pd silicide islands were formed by involving two kinds of growth behavior. It was found from plan view transmission electron microscopy (TEM) that the islands have two kinds of shape, one round and the other rectangular (one-dimensional). Comprehensive TEM/REM and diffraction analysis revealed that the two kinds of the Pd silicide islands with different shape and atomic Structure grew independently. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：388 / 392

页数：5

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