Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy

被引：7
|
作者：
Xu Jin [1 ]
Li Fu-Long
Yang De-Ren
机构：
[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
ACTA PHYSICA SINICA | 2007年 / 56卷 / 07期
关键词：
silicon; transmission electron microscopy; oxygen precipitate;
D O I：
10.7498/aps.56.4113
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5 nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650 degrees C.
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页码：4113 / 4116
页数：4
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