Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass

被引:40
|
作者
Sankar, A. Ravi [1 ]
Lahiri, S. K. [2 ]
Das, S. [3 ]
机构
[1] Indian Inst Technol, Dept Elect & ECE, Microelect & MEMS Lab, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Adv Technol Dev Ctr, Sponsored Res & Ind Consultancy, Kharagpur 721302, W Bengal, India
[3] Indian Inst Technol, Sch Med Sci & Technol, Kharagpur 721302, W Bengal, India
关键词
FABRICATION; ALUMINUM;
D O I
10.1088/0960-1317/19/2/025008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass is presented in this paper. The fabricated accelerometer device consists of a heavy proof mass supported by four thin flexures. Boron-diffused piezoresistors located near the fixed ends of the flexures are used for sensing the developed stress and hence acceleration. Performance enhancement is achieved by electroplating a gold mass of 20 mu m thickness on top of the proof mass. A commercially available sulfite-based solution TSG-250(TM) was used for the electroplating process. Aluminum metal lines were used to form a Wheatstone bridge for signal pick-up. To avoid galvanic corrosion between two dissimilar metals having contact in an electrolyte, a shadow mask technique was used to selectively deposit a Cr/Au seed layer on an insulator atop the proof mass for subsequent electrodeposition. Bulk micromachining was performed using a 5% dual-doped TMAH solution. Fabricated devices with different electroplated gold areas were tested up to +/- 13 g acceleration. For electroplated gold dimensions of 2500 mu m x 2500 mu m x 20 mu m on a proof mass, sensitivity along the Z-axis is increased by 21.8% as compared to the structure without gold. Off-axis sensitivities along the X- and Y-axes are reduced by 7.6% and 6.9%, respectively.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Performance enhancement of silicon MEMS PZR accelerometer with electroplated gold on proofmass
    Kal, S.
    Sankar, A. Ravi
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 662 - 669
  • [2] A Three-Axis Single-Proof-Mass CMOS-MEMS Piezoresistive Accelerometer with Frequency Output
    Chiu, Yi
    Huang, Tsung-Chih
    Hong, Hao-Chiao
    SENSORS AND MATERIALS, 2014, 26 (02) : 95 - 108
  • [3] A very-low cross-axis sensitivity piezoresistive accelerometer with an electroplated gold layer atop a thickness reduced proof mass
    Sankar, A. Ravi
    Das, S.
    SENSORS AND ACTUATORS A-PHYSICAL, 2013, 189 : 125 - 133
  • [4] Cross-axis sensitivity reduction of a silicon MEMS piezoresistive accelerometer
    Sankar, A. Ravi
    Das, S.
    Lahiri, S. K.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2009, 15 (04): : 511 - 518
  • [5] Cross-axis sensitivity reduction of a silicon MEMS piezoresistive accelerometer
    A. Ravi Sankar
    S. Das
    S. K. Lahiri
    Microsystem Technologies, 2009, 15 : 511 - 518
  • [6] Dynamic Behaviour and Piezoresistive Analysis of a Single Mass 3-Axis Polymer MEMS Accelerometer
    Khlifi, Awatef
    Mezghani, Brahim
    Tounsi, Fares
    Ahmed, Aftab
    Pandit, Shardul
    Patkar, Rajul
    Dixit, Pradeep
    Baghini, Maryam Shojaei
    2019 IEEE INTERNATIONAL CONFERENCE ON DESIGN & TEST OF INTEGRATED MICRO & NANO-SYSTEMS (DTS), 2019,
  • [7] Design, fabrication and testing of a high performance silicon piezoresistive Z-axis accelerometer with proof mass-edge-aligned-flexures
    Sankar, A. Ravi
    Jency, J. Grace
    Das, S.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2012, 18 (01): : 9 - 23
  • [8] Design, fabrication and testing of a high performance silicon piezoresistive Z-axis accelerometer with proof mass-edge-aligned-flexures
    A. Ravi Sankar
    J. Grace Jency
    S. Das
    Microsystem Technologies, 2012, 18 : 9 - 23
  • [9] A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
    Khir, Mohd Haris Md
    Qu, Peng
    Qu, Hongwei
    SENSORS, 2011, 11 (08) : 7892 - 7907
  • [10] An integrated MEMS piezoresistive tri-axis accelerometer
    张永平
    何常德
    于佳琪
    杜春晖
    张娟婷
    丑修建
    张文栋
    Journal of Semiconductors, 2013, 34 (10) : 80 - 86