Quasi-free standing GaN epitaxial layer grown on nano-columnar GaN by RF-plasma assisted molecular beam epitaxy

被引：0

作者：

Kusakabe, K ^{[1
]}

Yamada, T ^{[1
]}

Toyoura, Y ^{[1
]}

Bannai, R ^{[1
]}

Kikuchi, A ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach for the growth of free standing GaN on sapphire substrates is demonstrated. The self-organized GaN nano-column structure is introduced as a buffer layer of overgrown GaN, which produces the air-bridge-like structure and brings about the relaxed residual strain in the overgrown GaN layers. X-ray investigation reveals that the quasi-free standing 2-3 mum thick Si-doped GaN layers are grown on sapphire substrates by rf-plasma assisted molecular beam epitaxy without the post-growth process and/or the regrowth procedure. Overgrown GaN peeled from GaN nano-column is observed due to a simple mechanical process.

引用

页码：473 / 478

页数：6

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