Strain effects in SiN-passivated GaN-based HEMT devices

被引：3

作者：

Sacconi, Fabio ^{[1
]}

Povolotskyi, Michael ^{[1
]}

Di Carlo, Aldo ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, MINAS Dept Elect Eng, I-00133 Rome, Italy

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2006年 / 5卷 / 2-3期

关键词：

Surface charges; HEMT; Nitrides; Strain; Piezoelectric effect;

D O I：

10.1007/s10825-006-8829-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a passivating layer can reduce or even eliminate surface effects responsible for limiting both the RF current and breakdown voltage of AlGaN/GaN HEMTs. To study the effect of passivation on electrical characteristics of GaN-based devices, we have developed a macroscopic model of strain in SiN/AlGaN/GaN heterostructure, considering the system as a free-standing one. Basing on the strain results, we have calculated the strain map for a SiN-passivated structure and the electron sheet charge density in the channel. Results have been compared with experimental measurements and with an alternative passivation model.

引用

页码：115 / 118

页数：4

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