Top Heat Spreaders on GaN-based HEMT devices for improved thermal management

被引：0

作者：

Delage, Sylvain L. ^{[1
]}

Michel, Nicolas ^{[1
]}

Jacquet, Jean-Claude ^{[1
]}

Shakerzadeh, M. ^{[2
]}

Teo, E. H. T. ^{[2
]}

Kohn, Erhard ^{[3
,4
]}

机构：

[1] III V Lab, Palaiseau, France

[2] Nanyang Technol Univ, Singapore 639798, Singapore

[3] Ulm Univ, Inst Elec Devices, Ulm, Germany

[4] Ulm Univ, Circuits Dept, Ulm, Germany

来源：

2022 24TH INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON) | 2022年

基金：

新加坡国家研究基金会;

关键词：

Device; thermal; microwave; power component;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an overview of GaN-based High Electron Mobility Transistor (HEMT) thermal management by giving additional heat flow from the top of RF power devices. Different strategies have been tried by our laboratory over the years. All of them have been based on parallel microelectronic processing scheme to preserve cost and high frequency operation. In this article, we present two previous experimental results tried in the past namely with nano-crystalline diamond layers and more recently using boron nitride films. Material and electrical DC and microwave results are presented.

引用

页数：4

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