Self-aligned Double Patterning Compliant Routing with In-Design Physical Verification Flow

被引：2
|
作者：
Gao, Jhih-Rong [1 ]
Jawandha, Harshdeep
Atkar, Prasad
Walimbe, Atul
Baidya, Bikram
Rizzo, Olivier
Pan, David Z. [1 ]
机构：
[1] Univ Texas Austin, ECE Dept, Austin, TX 78712 USA
来源：
DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VII | 2013年 / 8684卷
关键词：
D O I：
10.1117/12.2013245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Among double patterning techniques, Self-aligned double patterning (SADP) has the advantage of good mask overlay control, which has made SADP a popular double patterning method for sub-32nm technology nodes. However, SADP process places several limitations on design flexibility. This work exploits an alternative post routing approach that has the flexibility to resolve lithography violations without the overhead of repeated rule checking. In addition, it allows for successive refinement in the definition of lithographic violations as the process node matures, and implementation of fixes as localized ECO (Engineering Change Order) operations without needing to reroute the complete design.
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页数：9
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