28V planar GaAs MESFETs for wireless base-station power amplifiers

被引：0
|
作者：
Yang, B [1 ]
Halder, S [1 ]
Ye, PD [1 ]
Daum, G [1 ]
Dai, W [1 ]
Frei, M [1 ]
Ng, K [1 ]
Bude, J [1 ]
Hwang, JCM [1 ]
Wilk, G [1 ]
机构：
[1] Agere Syst, Allentown, PA 18109 USA
来源：
2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST | 2005年
关键词：
breakdown voltage; planar MESFET; linearity; intermodulation product;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V(gs) = -1.5V) and 30V at on state (V(gs) = 0.5 V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is -34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.
引用
收藏
页码：244 / 247
页数：4
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