Topology Optimization of Stressed Capacitive RF MEMS Switches

被引：33

作者：

Philippine, Mandy A. ^{[1
]}

Sigmund, Ole ^{[2
]}

Rebeiz, Gabriel M. ^{[3
]}

Kenny, Thomas W. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Tech Univ Denmark DTU, Dept Mech Engn, DK-2800 Lyngby, Denmark

[3] Univ Calif San Diego, Dept Elect Engn, San Diego, CA 92093 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2013年 / 22卷 / 01期

基金：

美国国家科学基金会;

关键词：

Geometry design; intrinsic stress; mechanical design; radio-frequency microelectromechanical systems (RF MEMS); stress gradient; topology optimization; DESIGN; PLATES;

D O I：

10.1109/JMEMS.2012.2224640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-of-plane curling. We use topology optimization to systematically generate designs, by minimizing stress stiffening, minimizing curling, or minimizing stress stiffening while constraining the curling behavior. We present the corresponding problem formulations and sensitivity derivations and discuss the role of key elements in the problem formulation. [2012-0130]

引用

页码：206 / 215

页数：10

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