Lattice distortion and strain relaxation in epitaxial thin films of multiferroic TbMnO3 probed by X-ray diffractometry and micro-Raman spectroscopy

被引：4
|
作者：
Hu, Y. [1 ]
Stender, D. [1 ]
Medarde, M. [2 ]
Lippert, T. [1 ]
Wokaun, A. [1 ]
Schneider, C. W. [1 ]
机构：
[1] Paul Scherrer Inst, Gen Energy Res Dept, CH-5232 Villigen, Switzerland
[2] Paul Scherrer Inst, Lab Dev & Methods, CH-5232 Villigen, Switzerland
来源：
APPLIED SURFACE SCIENCE | 2013年 / 278卷
关键词：
Multiferroic; Thin film growth; Lattice distortion; Strain relaxation;
D O I：
10.1016/j.apsusc.2012.10.121
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A detailed structural XRD analysis of (1 1 0)-oriented TbMnO3 thin films grown on (1 1 0)-YAlO3 substrates shows the co-existence of a strained and relaxed "sublayer" within the films due to strain relaxation during epitaxial growth by pulsed laser deposition. The substrate-film lattice mismatch yields a compressive strain anisotropy along the two in-plane directions, i.e. [1-10] and [001] and a monoclinic distortion. A further manifestation of the growth-induced strain is the hardening of Raman active modes as a result of changed atomic motions along the [1-10] and [0 0 1] directions. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：92 / 95
页数：4
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