Lattice distortion and strain relaxation in epitaxial thin films of multiferroic TbMnO3 probed by X-ray diffractometry and micro-Raman spectroscopy

被引：4

作者：

Hu, Y. ^{[1
]}

Stender, D. ^{[1
]}

Medarde, M. ^{[2
]}

Lippert, T. ^{[1
]}

Wokaun, A. ^{[1
]}

Schneider, C. W. ^{[1
]}

机构：

[1] Paul Scherrer Inst, Gen Energy Res Dept, CH-5232 Villigen, Switzerland

[2] Paul Scherrer Inst, Lab Dev & Methods, CH-5232 Villigen, Switzerland

来源：

APPLIED SURFACE SCIENCE | 2013年 / 278卷

关键词：

Multiferroic; Thin film growth; Lattice distortion; Strain relaxation;

D O I：

10.1016/j.apsusc.2012.10.121

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A detailed structural XRD analysis of (1 1 0)-oriented TbMnO3 thin films grown on (1 1 0)-YAlO3 substrates shows the co-existence of a strained and relaxed "sublayer" within the films due to strain relaxation during epitaxial growth by pulsed laser deposition. The substrate-film lattice mismatch yields a compressive strain anisotropy along the two in-plane directions, i.e. [1-10] and [001] and a monoclinic distortion. A further manifestation of the growth-induced strain is the hardening of Raman active modes as a result of changed atomic motions along the [1-10] and [0 0 1] directions. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：92 / 95

页数：4

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