Enhanced tunneling in the GaAs p+-n+ junction by embedding InAs quantum dots

被引：7

作者：

Wang, Lijuan ^{[1
]}

He, Jifang ^{[1
]}

Shang, Xiangjun ^{[2
]}

Li, Mifeng ^{[1
]}

Yu, Ying ^{[1
]}

Zha, Guowei ^{[1
]}

Ni, Haiqiao ^{[1
]}

Niu, Zhichuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] KTH Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, SE-10691 Stockholm, Sweden

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 11期

基金：

中国国家自然科学基金;

关键词：

BIPOLAR CASCADE LASERS; GROWN-GAAS;

D O I：

10.1088/0268-1242/27/11/115010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs p(+)-n(+) junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I-V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p(++)-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm(-2) at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.

引用

页数：4

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