Measurement of Temperature Distribution in SnAg3.5 Flip-Chip Solder Joints during Current Stressing Using Infrared Microscopy

被引：0
|
作者：
Hsiao, Hsiang-Yao [1 ]
Chen, Chih [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
EPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
10.1109/EPTC.2008.4763505
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Several simulation studies reported that a hot spot exists in flip-chip solder bumps under accelerated electromigration. Yet, there are no experimental data to verify it. In this paper, the temperature distribution during electromigration in flip-chip SnAg3.5 solder bumps is directly inspected using infrared microscopy. Two clear hot spots are observed in the bump. One is located at the region with peak current density, and the other one is at the bump edge under the current-feeding metallization on the chip side. Under a current stress of 1.06 x 10(4) A/cm(2), the temperature in the two hot spots are 161.7 degrees C and 167.8 degrees C, respectively, which surpass the average bump temperature of 150.5 degrees C. In addition, effect of under-bump-metallization (UBM) thickness oil the hot spots is also examined. It indicates that the hot-spot temperature in the solder bump increases for the solder joints with a thinner UBM. Electromigration test indicates that these hot spots have significant influence oil the initial failure location.
引用
收藏
页码：639 / 643
页数：5
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