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Effects of Random Inputs and Short-Term Synaptic Plasticity in a LIF Conductance Model for Working Memory Applications
被引:0
|作者:
Thieu, Thi Kim Thoa
[1
]
Melnik, Roderick
[1
,2
]
机构:
[1] Wilfrid Laurier Univ, MS2Discovery Interdisciplinary Res Inst, 75 Univ Ave West, Waterloo, ON N2L 3C5, Canada
[2] BCAM Basque Ctr Appl Math, Bilbao, Spain
来源:
基金:
加拿大自然科学与工程研究理事会;
关键词:
Working memory;
Short-term synaptic plasticity;
LIF;
Langevin stochastic models;
Spike time irregularity;
Random input currents;
Synaptic conductances;
Neuron spiking activities;
Uncertainty factors;
Membrane and action potentials;
Neuron refractory periods;
D O I:
10.1007/978-3-031-07704-3_6
中图分类号:
TP39 [计算机的应用];
学科分类号:
081203 ;
0835 ;
摘要:
Working memory (WM) has been intensively used to enable the temporary storing of information for processing purposes, playing an important role in the execution of various cognitive tasks. Recent studies have shown that information in WM is not only maintained through persistent recurrent activity but also can be stored in activity-silent states such as in short-term synaptic plasticity (STSP). Motivated by important applications of the STSP mechanisms in WM, the main focus of the present work is on the analysis of the effects of random inputs on a leaky integrate-and-fire (LIF) synaptic conductance neuron under STSP. Furthermore, the irregularity of spike trains can carry the information about previous stimulation in a neuron. A LIF conductance neuron with multiple inputs and coefficient of variation (CV) of the inter-spike-interval (ISI) can bring an output decoded neuron. Our numerical results show that an increase in the standard deviations in the random input current and the random refractory period can lead to an increased irregularity of spike trains of the output neuron.
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页码:59 / 72
页数:14
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