Working memory;
Short-term synaptic plasticity;
LIF;
Langevin stochastic models;
Spike time irregularity;
Random input currents;
Synaptic conductances;
Neuron spiking activities;
Uncertainty factors;
Membrane and action potentials;
Neuron refractory periods;
D O I:
10.1007/978-3-031-07704-3_6
中图分类号:
TP39 [计算机的应用];
学科分类号:
081203 ;
0835 ;
摘要:
Working memory (WM) has been intensively used to enable the temporary storing of information for processing purposes, playing an important role in the execution of various cognitive tasks. Recent studies have shown that information in WM is not only maintained through persistent recurrent activity but also can be stored in activity-silent states such as in short-term synaptic plasticity (STSP). Motivated by important applications of the STSP mechanisms in WM, the main focus of the present work is on the analysis of the effects of random inputs on a leaky integrate-and-fire (LIF) synaptic conductance neuron under STSP. Furthermore, the irregularity of spike trains can carry the information about previous stimulation in a neuron. A LIF conductance neuron with multiple inputs and coefficient of variation (CV) of the inter-spike-interval (ISI) can bring an output decoded neuron. Our numerical results show that an increase in the standard deviations in the random input current and the random refractory period can lead to an increased irregularity of spike trains of the output neuron.
机构:
Physics Laboratory, Istituto Superiore di Sanità, V.le Regina Elena 299, 00161 Roma, ItalyPhysics Laboratory, Istituto Superiore di Sanità, V.le Regina Elena 299, 00161 Roma, Italy
Giudice, P.Del
Mattia, M.
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机构:
Physics Laboratory, Istituto Superiore di Sanità, V.le Regina Elena 299, 00161 Roma, ItalyPhysics Laboratory, Istituto Superiore di Sanità, V.le Regina Elena 299, 00161 Roma, Italy
机构:
Department of Physics and Institute for Brain Sciences, Nanjing UniversityDepartment of Physics and Institute for Brain Sciences, Nanjing University
杨帆
刘锋
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机构:
Department of Physics and Institute for Brain Sciences, Nanjing UniversityDepartment of Physics and Institute for Brain Sciences, Nanjing University
机构:
Univ Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, MexicoUniv Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, Mexico
Barroso-Flores, Janet
Herrera-Valdez, Marco A.
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机构:
Univ Nacl Autonoma Mexico, Fac Ciencias, Dept Matemat, Mexico City, DF 04510, MexicoUniv Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, Mexico
Herrera-Valdez, Marco A.
Galarraga, Elvira
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机构:
Univ Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, MexicoUniv Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, Mexico
Galarraga, Elvira
Bargas, Jose
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机构:
Univ Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, MexicoUniv Nacl Autonoma Mexico, Div Neurociencias, Inst Fisiol Celular, Mexico City, DF 04510, Mexico