Effects of the top-electrode preparation method on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

被引：0

作者：

Lee, EG ^{[1
]}

Lee, JG

Kim, SJ

机构：

[1] Chosun Univ, Dept Mat Sci & Engn, Kwangju 501759, South Korea

[2] Kookmin Univ, Sch Met & Mat Engn, Seoul 136707, South Korea

[3] Sejong Univ, Dept Nanosci & Technol, Seoul 143747, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷 / 05期

关键词：

ferroelectrics; sputtering; RIE; internal field; fatigue;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The deformation in the hysteresis loop of Pt/PZT/Pt thin-film capacitors due to deposition and patterning of the top electrode has been investigated. The PZT film was aged during the deposition of the top electrode and was positively poled during reactive ion etching (RIE). The PZT film having sputtered top electrode was very sensitive to the RIE process. The film with a thinner top electrode showed less initial switching polarization due to less compressive stress, but better fatigue characteristics due to an enhanced partial-switching region.

引用

页码：956 / 959

页数：4

共 50 条

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