AlN films deposited by LP-MOCVD atomic layer deposition at lower temperatures using DMEAA and ammonia

被引：0
|
作者：
Kidder, JN [1 ]
Kuo, JS [1 ]
Pearsall, TP [1 ]
Rogers, JW [1 ]
机构：
[1] UNIV WASHINGTON,DEPT MAT SCI & ENGN,SEATTLE,WA 98195
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：249 / 254
页数：6
相关论文
共 50 条
  • [41] The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
    Alevli, M.
    Ozgit, C.
    Donmez, I.
    ACTA PHYSICA POLONICA A, 2011, 120 (6A) : A58 - A60
  • [42] Nitridation of hafnium silicate thin films deposited by atomic layer deposition
    Senzaki, Y
    Chatham, H
    Higuchi, R
    Bercaw, C
    DeDontney, J
    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II, 2004, 2003 (22): : 259 - 264
  • [43] Effect of growth temperature on AlN thin films fabricated by atomic layer deposition
    Kim, Yong
    Kim, Min Soo
    Yun, Hee Ju
    Ryu, Sung Yeon
    Choi, Byung Joon
    CERAMICS INTERNATIONAL, 2018, 44 (14) : 17447 - 17452
  • [44] Structural characterization of AlN thin films grown on sapphire by atomic layer deposition
    Li, Wangwang
    Xue, Weibiao
    THIN SOLID FILMS, 2023, 773
  • [45] Atomic layer deposition of AlN using atomic layer annealing-Towards high-quality AlN on vertical sidewalls
    Osterlund, Elmeri
    Seppaenen, Heli
    Bespalova, Kristina
    Miikkulainen, Ville
    Paulasto-Kroeckel, Mervi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
  • [46] Electrical and Optical Properties of Zinc Oxide Thin Films Deposited Using Atomic Layer Deposition
    Kim, Jeong-Eun
    Bae, Seung-Muk
    Yang, Heesun
    Hwang, Jin-Ha
    JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2010, 47 (04) : 353 - 356
  • [47] Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition
    Jeong, Wooho
    Ko, Youngbin
    Bang, Seokhwan
    Lee, Seungjun
    Jeon, Hyeongtag
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (03) : 905 - 910
  • [48] Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition
    Jeon, Sunyeol
    Bang, Seokhwan
    Lee, Seungjun
    Kwon, Semyung
    Jeong, Wooho
    Jeon, Hyeongtag
    Chang, Ho Jung
    Park, Hyung-Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (06) : 3287 - 3295
  • [49] Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition
    Mitchell, D. R. G.
    Triani, G.
    Zhang, Z.
    THIN SOLID FILMS, 2008, 516 (23) : 8414 - 8423
  • [50] Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition
    Kolhep, Maximilian
    Sun, Cheng
    Blaesing, Juergen
    Christian, Bjoern
    Zacharias, Margit
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
12345