AlN films deposited by LP-MOCVD atomic layer deposition at lower temperatures using DMEAA and ammonia

被引：0
|
作者：
Kidder, JN [1 ]
Kuo, JS [1 ]
Pearsall, TP [1 ]
Rogers, JW [1 ]
机构：
[1] UNIV WASHINGTON,DEPT MAT SCI & ENGN,SEATTLE,WA 98195
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：249 / 254
页数：6
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