Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β-FeSi2 film on Si(100)

被引：0

作者：

Yamaguchi, Kenji ^{[1
]}

Hamamoto, Satoshi ^{[2
]}

Hojou, Kiichi ^{[1
]}

机构：

[1] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, 2-4 Shirakata Shirane, Tokai, Ibaraki 3191195, Japan

[2] Ibaraki Univ, Grad Sch Sci & Engn, Mito, Ibaraki 3108512, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12 | 2013年 / 10卷 / 12期

关键词：

beta-FeSi2; epitaxial growth; ion beam sputter deposition; sputter-etching; BEAM SPUTTER-DEPOSITION; THIN-FILMS;

D O I：

10.1002/pssc.201300355

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of beta-FeSi2 films formed on Si substrate was investigated. The substrates were treated with Ne+ ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the film growth with an epitaxial relationship of beta-FeSi2 (100) // Si (100) were identified. These results were explained qualitatively in terms of the substrate treatment conditions, deposition temperature, as well as on the local Fe/ Si ratio. The observed dependence of the film structure on these experimental parameters indicated that careful optimization of substrate treatment conditions and deposition parameters would further stimulate effort to fabricate beta-FeSi2 films with excellent crystalline properties. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1699 / 1703

页数：5

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