Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer

被引：0

作者：

Koh, Kyoung Wook ^{[1
]}

Kim, Dong Hun ^{[1
]}

Ryu, Ju Tae ^{[1
]}

Kim, Tae Whan ^{[1
]}

Yoo, Keon-Ho ^{[2
,3
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[3] Kyung Hee Univ, Res Inst Basic Sci, Seoul 130701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2015年 / 67卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

SONOS; Fixed charge; Threshold voltage shift; CTF degradation; RTN; RANDOM TELEGRAPH NOISE; DEVICES;

D O I：

10.3938/jkps.67.533

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.

引用

页码：533 / 536

页数：4

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