a-Si:H/c-Si interface hydrogenation for implied Voc=755 mV in Silicon heterojunction solar cell

被引：0

作者：

Soman, Anishkumar ^{[1
]}

Nsofor, Ugochukwu ^{[1
,2
]}

Das, Ujjwal ^{[2
]}

Gu, Tingyi ^{[1
]}

Hegedus, Steve ^{[1
,2
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

Interface; hydrogen passivation; heterojunction; silicon solar cells; AMORPHOUS-SILICON; DEPOSITION;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The amorphous (a-Si:H) and crystalline silicon (cSi) interface plays a pivotal role in determining the V-oc of the silicon heterojunction solar cell. Extrinsic hydrogenation by plasma treatment of the a-Si"H films is shown in this work to be a viable option to reduce the interface recombination. The mechanism of hydrogenation has been studied by analyzing the H bond configuration using Fourier Transform Infrared Spectroscopy and Raman spectroscopy. We have obtained an implied V-oc, of 755 mV and minority carrier lifetime of 4.6 ms for 10 nm thick hydrogen treated intrinsic a-Si:H films on textured ntype Cz silicon wafers. The proof of concept has been validated by fabricating front junction cells having V-oc, of 729 mV, with our best cell results reaching 20.2% efficiency.

引用

页码：1927 / 1930

页数：4

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