A-Si:H and a-Si:H/μc-Si:H tandem solar cell

The p-nc-SiOx:H film was prepared by high hydrogen dilution with a combination of high lengthwise conductivity of 1.1×10-5 S/cm and low transverse conductivity of 4.2×10-8 S/cm as well as high optical bandgap of 2.52 eV, which was as the window layer of single-junction a-Si:H solar cell and demonstrated the higher quantum efficiency at the short wavelength. However, the recombination at p/i interface was enhanced due to the larger band gap of p-nc-SiOx:H window layer. The effect of band gap of buffer layers at p/i interface on the performance of a-Si:H solar cell was studied. The results indicate that increasing the band gap of buffer layer can significantly improve the built-in electric field and the conversion efficiency. The initial conversion efficiency of optimized a-Si:H/μc-Si:H tandem solar cell can reach up to 12.99% based on a-Si:H cell having high open circuit voltage as top cell. ©, 2015, Science Press. All right reserved.