Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

被引：0
|
作者：
Singha, Bandana [1 ]
Solanki, Chetan Singh [1 ]
机构：
[1] Indian Inst Technol, Dept Energy Sci & Technol, Bombay 400076, Maharashtra, India
来源：
INTERNATIONAL CONFERENCE ON ADVANCES IN MATERIALS AND MANUFACTURING APPLICATIONS (ICONAMMA-2016) | 2016年 / 149卷
关键词：
D O I：
10.1088/1757-899X/149/l/012174
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boric acid ( BA) is a spin on dopant (BSoD) source which is used to form p(+) emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values <= 90 Omega/square. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.
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页数：4
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